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Volumn 482, Issue , 1997, Pages 369-374

Atomic scale aluminum and strain distribution in a GaN/AlxGa1-xN heterostructure

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; INTERFACES (MATERIALS); LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 0031388674     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-369     Document Type: Conference Paper
Times cited : (13)

References (12)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.