|
Volumn 482, Issue , 1997, Pages 369-374
|
Atomic scale aluminum and strain distribution in a GaN/AlxGa1-xN heterostructure
a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ELECTRON MICROSCOPY;
INTERFACES (MATERIALS);
LATTICE CONSTANTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL EFFECTS;
STRAIN DISTRIBUTION;
HETEROJUNCTIONS;
|
EID: 0031388674
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-482-369 Document Type: Conference Paper |
Times cited : (13)
|
References (12)
|