Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH 3

Electrochemical and Solid-State Letters

Volumn 9, Issue 3, 2006, Pages

  Kim, Soo Hyun ^a   Kim, Jun Ki ^a   Kwak, Nohjung ^a   Sohn, Hyunchul ^a   Kim, Jinwoong ^a   Jung, Sung Hoon ^b   Hong, Mi Ran ^b   Lee, Sang Hyeob ^c   Collins, Josh ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Novellus Systems Korea   (South Korea)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEPOSITION; NANOSTRUCTURED MATERIALS; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER DEPOSITION; NANOCRYSTALLINE GRAINS; REACTION CYCLES; TUNGSTEN NITRIDE;

THIN FILMS;

EID: 31044432920     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2161451     Document Type: Article

References (22)

1. A. E. Kaloyeros and E. Eisenbraun, Annu. Rev. Mater. Sci., 30, 363 (2000).
2. International Technology Roadmap for Semiconductors, 2003 ed., p. 7, SIA, 〈 http://public.itrs.net/Files/2003ITRS/Home2003.htm 〉
3. J. W. Klaus, S. J. Ferro, and S. M. George, J. Electrochem. Soc., 147, 1175 (2000).
4. K.-E. Elers, W. Saanila, P. J. Soininen, W.-M. Li, J. T. Kostamo, S. Haukka, J. Juhanoja, and W. F. A. Besling, Chem. Vap. Deposition, 8, 149 (2002).
5. J. S. Becker and R. G. Gordon, Appl. Phys. Lett., 82, 2239 (2003).
6. J. S. Becker, S. Suh, S. Wang, and R. G. Gordon, Chem. Mater., 15, 2969 (2003).
7. M. Ritala, M. Leskelä, E. Rauhala, and P. Haussalo, J. Electrochem. Soc., 142, 2731 (1995).
8. M. Juppo, P. Aĺn, M. Ritala, and M. Leskelä, Chem. Vap. Deposition, 7, 211 (2001).
9. W.-M. Li, K.-E. Elers, J. Kostamo, S. Kaipio, H. Huotari, M. Soininen, P. J. Soininen, M. Tuominen, S. Haukka, S. Smith, and W. Besling, in Proceedings of the IEEE 2002 International Interconnect Technology Conference, June 3-5, 2002, p. 191 (2002).
10. S. Smith, W.-M. Li, K.-E. Elers, and K. Pfeifer, Microelectron. Eng., 64, 247 (2002).
11. S.-H. Kim, S. S. Oh, D.-H. Kang, K.-B. Kim, W.-M. Li, S. Haukka, and M. Tuominen, Appl. Phys. Lett., 82, 4486 (2003).
12. S. Bystrova, A. A. I. Aarnink, J. Holleman, and R. A. M. Wolters, J. Electrochem. Soc., 152, G522 (2005).
13. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era, Vol. 1, 2nd ed., pp. 187-202, Lattice Press, Sunset Beach, CA (2000).
14. M. Yang, H. Chung, A. Yoon, H. Fang, A. Zhang, C. Knepfler, R. Jackson, J. S. Byun, A. Mak, M. Eizenberg, M. Xi, M. Kori, and A. K. Sinha, in Conference Proceedings of ULSI XVII, p. 655, MRS (2002).
15. S.-H. Kim, E.-S. Hwang, B.-M. Kim, J.-W. Lee, H.-J. Sun, T. E. Hong, J.-K. Kim, H. Sohn, J. Kim, and T.-S. Yoon, Electrochem. Solid-State Lett., 8, C155 (2005).
16. T. S. Kuan, C. K. Inoki, G. S. Oehrlein, K. Ross, Y.-P. Zhao, G.-C. Wang, S. M. Rossnagel, and C. Cabral, Jr., Mater. Res. Soc. Symp. Proc., 612, D7.1.1 (2000).
17. Y. G. Shen, Y. W. Mai, D. R. Mckenzie, Q. C. Zhang, W. D. McFall, and W. E. McBride, J. Appl. Phys., 88, 1380 (2000).
18. H. T. Chiu and S. H. Chuang, J. Mater. Res., 8, 1353 (1993).
19. B.-S. Suh, Y.-J. Lee, J.-S. Hwang, and C.-O. Park, Thin Solid Films, 348, 299 (1999).
20. B.-H. Lee, K.-S. Lee, D.-K. Sohn, J.-S. Byun, C.-H. Han, J.-S. Park, S.-B. Han, and J.-W. Park, Appl. Phys. Lett., 76, 2538 (2000).
21. H. P. Kattelus, E. Kolawa, K. Affolter, and M.-A. Nicolet, J. Vac. Sci. Technol. A, 3, 2246 (1985).
22. K.-C. Park, K.-B. Kim, I. Raaijmakers, and K. Ngan, J. Appl. Phys., 80, 5674 (1996).