Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 747-749

  Monte, A F G ^a   De Sales, F V ^b   Finley, J J ^a   Fox, A M ^a   Da Silva, S W ^b   Morais, P C ^b   Skolnick, M S ^a   Hopkins, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF BRASILIA   (Brazil)

Author keywords

Carrier diffusion; Photoluminescence; Quantum dots

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

TIME-RESOLVED SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038581515     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00117-4     Document Type: Conference Paper

References (7)

1. Bimberg D., Grundmann M., Ledentsov N.N. Quantum Dot Heterostructures. 1998;Wiley, New York.
2. Fafard S., Hinzer K., Raymond S., Dion M., McCaffrey J., Feng Y., Charbonneau S. Red-emitting semiconductor quantum dot lasers. Science. 274:1996;1350.
3. Monte A.F.G., Finley J.J., Ashmore A., Fox A.M., Skolnick M.S., Mowbray D.J., Hopkins M. Carrier dynamics in red-emitting self-organized InAs-AlGaAs quantum dots with indirect barriers. Physica E. 2003;. in press.
4. Monte A.F.G., da Silva S.W., Cruz J.M.R., Morais P.C., Cox H.M. Spatial and temperature dependence of photocarrier in InGaAs/InP quantum wells. Journal of Applied Physics. 85:(5):1999;2866-2869.
5. 1-xAs self-assembled quantum dots. Physical Review B. 52:1995;17238.
6. 1-yAs self-assembled quantum dots. Physical Review B. 59:1999;5064.
7. Fiore A., Borri P., Langbein W., Hvam J.M., Oesterie U., Houdré R., Stanley R.P., Ilegems M. Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm. Applied Physics Letters. 76:2000;3430.