Semiconductor detectors for use in high radiation damage environments - Semi-insulating GaAs or silicon?

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 81-87

  Jones, B K ^a   Santana, J ^a   McPherson, M ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; ELECTRIC PROPERTIES; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

CHARGE COLLECTION EFFICIENCY; RELAXATION SEMICONDUCTOR THEORY;

RADIATION DETECTORS;

EID: 0031208131     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00609-8     Document Type: Article

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