The space charge relaxation behaviour of silicon diodes irradiated with 1 MeV neutrons

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 517, Issue 1-3, 2004, Pages 42-53

  McPherson, M ^a  

^a UNIVERSITY OF KWAZULU NATAL   (South Africa)

Author keywords

Detector; Neutrons; Relaxation; Semiconductor; Silicon

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY; FERMI LEVEL; GOLD; NEUTRON IRRADIATION; RADIATION DAMAGE; RELAXATION PROCESSES; SEMICONDUCTOR DOPING;

CHARGE RELAXATION; OHMIC BEHAVIOR;

NUCLEAR INSTRUMENTATION;

EID: 0346338309     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.09.044     Document Type: Article

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