AlGaN-GaN HEMTs: Material, device, circuit technology and applications

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-January, Issue , 2003, Pages 165-166

  Parikh, P ^a   Wu, Y F ^a   Chavarkar, P ^a   Moore, M ^a   Mishra, U K ^a   Sheppard, S ^b   Smith, R P ^b   Saxler, A ^b   Duc, J ^b   Pribble, W ^b   Milligan, J ^b   Palmour, J ^b  

^a Cree Santa Barbara Technology Center   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

Aluminum gallium nitride; Broadband amplifiers; Circuits; Fabrication; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Temperature; Thermal management

Indexed keywords

BROADBAND AMPLIFIERS; FABRICATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NETWORKS (CIRCUITS); NITRIDES; SILICON CARBIDE; TEMPERATURE; TEMPERATURE CONTROL;

ALGANGAN; CIRCUIT TECHNOLOGY; GAN BASED; GAN HEMTS; HYBRID AMPLIFIER; RECENT PROGRESS;

ALUMINUM GALLIUM NITRIDE;

EID: 84943563301     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.2003.1239957     Document Type: Conference Paper

References (4)

1. U.K. Mishra, et. al.; Proceedings IEEE, Vol. 90, No. 6, pp. 1022-1031, 2002.
2. Y.-F. Wu, et al.; IEDM Technical Digest, pp. 378-380, 2001.
3. J. W. Palmour et. al.; IEDM Technical Digest, 2001.
4. W. Lu, et al; IEEE Transactions on Electron Devices, Vo. 48, No. 3, pp. 581-585, 2001.