Al-free Ti/Mo/Ta/Au-based n-type ohmic contact with a smooth surface for AlGaN/GaN power HEMTs

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2529-2532

  Ohki, Toshihiro ^a   Kanamura, Masahito ^a   Takahashi, Tsuyoshi ^a   Kikkawa, Toshihide ^a   Joshin, Kazukiyo ^a   Hara, Naoki ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; ELECTRIC RESISTANCE; GALLIUM NITRIDE; GOLD; HIGH ELECTRON MOBILITY TRANSISTORS; MOLYBDENUM; MORPHOLOGY; TITANIUM; TRANSCONDUCTANCE;

BARRIER LAYER; CONTACT RESISTANCE; N-TYPE OHMIC CONTACT; SMOOTH SURFACE;

OHMIC CONTACTS;

EID: 27344459125     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461554     Document Type: Conference Paper

References (7)

1. T. Kikkawa, T. Maniwa, H. Hayashi, M. Kanamura, S. Yokokawa, M. Nishi, N. Adachi, M. Yokoyama, Y. Tateno, and K. Joshin, IEEE Int. Microwave Symp. Tech. Digest, pp. 1347-1350 (2004).
2. Y-F. Wu, D. Kpoplnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IEEE Trans. Electron. Devices 48, 586 (2000).
3. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata, and M. Kuzuhara, IEEE Int. Microwave Symp. Tech. Digest, pp. 1351-1354 (2004).
4. J. W. Palmour, S. T. Sheppard, R. P. Smith, S. T. Allen, W. L. Pribble, T. J. Smith, Z. Ring, J. J. Sumakeris, A. W. Saxler, and J. W. Miligan, IEEE IEDM Tech. Digest, pp. 385-388 (2001).
5. S. Murai, H. Masuda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 80, 2934 (2002).
6. T. Kikkawa, M. Nagahara, N. Okamoto, Y. Tateno, Y. Yamaguchi, N Hara, K. Joshin, and P. M. Asbeck, IEEE IEDM Tech. Digest, pp. 585-588 (2001).
7. M. Kanamura, T. Kikkawa, N. Adachi, T. Kimura, S. Yokogawa, M. Nagahara, N. Hara, and K. Joshin, Extended Abstracts of Int. Conf. Solid State Devices and Materials, pp. 916-917 (2003).