Projected range, range straggling and lateral spread of 2.0 MeV Au+ ions implanted into Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 918-921

  Wang, Ke Ming ^a   Chen, Feng ^c   Hu, I ^b   Zhang, Jiang Hua ^a   Liu, Xiang Dong ^a   Shen, Ding Yu ^b   Narusawa, Tadashi ^c   Nagaki, Masakane ^a  

^a SHANDONG UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Lateral spread; MeV ion implantation; Projected range; Range straggling; Rutherford backscattering; Si

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; GOLD; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES;

RANGE STRAGGLING;

ION IMPLANTATION;

EID: 0036478562     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.918     Document Type: Article

References (14)