Synchrotron X-ray diffraction studies of silicon implanted with high-energy Ar ions after thermal annealing

Journal of Alloys and Compounds

Volumn 382, Issue 1-2, 2004, Pages 146-152

  Wierzchowski, W ^a   Wieteska, K ^b   Auleytner, J ^c   Graeff, W ^d   Zymierska, D ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF ATOMIC ENERGY   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d DESY   (Germany)

Author keywords

Annealing; Argon; Implantation; Rocking curve; Semiconductors; Silicon; Strain; Synchrotron radiation; X ray diffraction; X ray topography

Indexed keywords

ANNEALING; ARGON; COMPUTER SIMULATION; DOPING (ADDITIVES); ION IMPLANTATION; PRECIPITATION (CHEMICAL); SILICON; SINGLE CRYSTALS; STRAIN; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

ROCKING ROCKING CURVE; STRAIN DISTRIBUTION; THERMAL ANNEALING; X-RAY TOPOGRAPHY;

SEMICONDUCTOR MATERIALS;

EID: 8344234152     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.05.026     Document Type: Conference Paper

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