Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum

Journal of Crystal Growth

Volumn 240, Issue 3-4, 2002, Pages 501-507

  Kakanakova Georgieva, A ^a   Yakimova, R ^a   Gueorguiev, G K ^b   Linnarsson, M K ^c   Syvajarvi M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF COIMBRA   (Portugal)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A1. Doping; A1. Impurities; A3. Vapor phaseepitaxy; B1. Inorganic compounds; B2. Semiconducting materials

Indexed keywords

CRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUBLIMATION; SUBSTRATES; VAPOR PHASE EPITAXY;

COHESIVE ENERGIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036570420     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01077-1     Document Type: Article

References (23)

1. SiC - High temperature material