Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 686-691

  Benson, J D ^a   Stoltz, A J ^a   Boyd, P R ^b   Martinka, M ^a   Varesi, J B ^c   Almeida, L A ^a   Olver, K A ^b   Kaleczyc, A W ^a   Johnson, S M ^c   Radford, W A ^c   Dinan, J H ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

Anisotropy; Aspect ratio; Electron cyclotron resonance; Etch bias; HgCdTe

Indexed keywords

ANISOTROPY; ASPECT RATIO; ELECTRON CYCLOTRON RESONANCE; LITHOGRAPHY; PLASMA ETCHING;

LITHOGRAPHY FACTORS;

MERCURY COMPOUNDS;

EID: 0042768029     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0053-y     Document Type: Conference Paper

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