Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1132-1135

  Mazurenko, D A ^a   Scherbakov, A V ^a   Akimov, A V ^a   Kent, A J ^b   Henini, M ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; PHOTOIONIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

OPTICAL EXCITATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033311460     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/321     Document Type: Article

References (6)

1. Ledentsov N N, Ustinov V M, Shchukin V A, Kop'ev P S, Alferov Zh I and Bimberg D 1998 Semiconductors 32 343
2. Sobolev M M, Kovsh A R, Ustinov V M, Egorov A Yu, Zhukov A E, Maksimov M V and Ledentsov N N 1997 Semiconductors 31 1074
3. Akimov A V and Shofman V G 1992 J. Lumin. 53 335
4. Ridley B K 1993 Quantum Processes in Semiconductors (Oxford: Clarendon)
5. Mazurenko D A et al to be published
6. Klein M V 1975 Light Scattering in Solids IV (Topics in Applied Physics 8) ed M Cardona (Berlin: Springer) p 147