Role of oxidation on porous silicon photoluminescence and its excitation

Thin Solid Films

Volumn 381, Issue 1, 2001, Pages 88-93

  Torchinskaya, T V ^a   Korsunskaya, N E ^b   Khomenkova, L Yu ^b   Dhumaev, B R ^b   Prokes, S M ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; COMPOSITION EFFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROUS SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

DANGLING BONDS; SUBOXIDES;

PROTECTIVE COATINGS;

EID: 0035155923     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01351-1     Document Type: Article

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