High-temperature oxidation of sintered silicon carbide under pure CO 2 at low pressure: Active-passive transition

Applied Surface Science

Volumn 133, Issue 1-2, 1998, Pages 115-123

  Balat, M ^a   Berjoan, R ^a   Pichelin, G ^a   Rochman, D ^a  

^a Centre National de la Recherche Scientifique   (France)

Author keywords

Active to passive transition; Carbon dioxide; High temperature; Oxidation; Silicon carbide; XPS

Indexed keywords

CARBON DIOXIDE; COMPUTER SIMULATION; ETCHING; HIGH TEMPERATURE OPERATIONS; MASS TRANSFER; PHASE INTERFACES; SILICA; THERMOOXIDATION; VAPORIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ACTIVE TO PASSIVE TRANSITION;

SILICON CARBIDE;

EID: 0031680343     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00193-7     Document Type: Article

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