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Volumn , Issue , 2004, Pages 24-27

CMOS technology for MS/RF SoC

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INTEGRATED CIRCUITS; LOCAL AREA NETWORKS; NATURAL FREQUENCIES; OPTIMIZATION;

EID: 3042614141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (19)
  • 5
    • 84886448146 scopus 로고    scopus 로고
    • Accurate drain conductance and modeling for distortion analysis in MOSFETs
    • R. van Langevelde and F. M. Klaassen, "Accurate Drain Conductance and Modeling for Distortion Analysis in MOSFETs," IEEE Intl. Electron Device Meeting, pp. 313-316, 1997.
    • (1997) IEEE Intl. Electron Device Meeting , pp. 313-316
    • Van Langevelde, R.1    Klaassen, F.M.2
  • 6
    • 0025398785 scopus 로고
    • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
    • March
    • K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors," IEEE Trans, on Electron Devices, Vol. 37, No. 3, pp. 654-665, March 1990.
    • (1990) IEEE Trans, on Electron Devices , vol.37 , Issue.3 , pp. 654-665
    • Hung, K.K.1    Ko, P.K.2    Hu, C.3    Cheng, Y.C.4
  • 7
    • 0001339740 scopus 로고
    • Random telegraph signals arising from fast interface states in MOS transistors
    • M. H. Tsai, H. Muto, and T. P. Ma, "Random telegraph signals arising from fast interface states in MOS transistors," Applied Physics Letters, pp. 1691-1693, 1992.
    • (1992) Applied Physics Letters , pp. 1691-1693
    • Tsai, M.H.1    Muto, H.2    Ma, T.P.3
  • 9
    • 3042580305 scopus 로고    scopus 로고
    • San Jose CA, April
    • TSMC Technology Symposium, San Jose CA, April 2002, www.tsmc.com.
    • (2002) TSMC Technology Symposium
  • 10
    • 0035058893 scopus 로고    scopus 로고
    • Wideband BiCMOS VCO for GSM/UMTS direct conversion receivers
    • J. Kucera, "Wideband BiCMOS VCO for GSM/UMTS Direct Conversion Receivers," IEEE Intl. Solid State Circuits Conference, pp. 374-375, 2001.
    • (2001) IEEE Intl. Solid State Circuits Conference , pp. 374-375
    • Kucera, J.1
  • 11
    • 84886448106 scopus 로고    scopus 로고
    • Effects of gate depletion and boron penetration on matching of deep sub-micron CMOS transistors
    • H. P. Tuinhout, A. H. Montree, J. Schmitz, P. A. Stolk, "Effects of gate depletion and boron penetration on matching of deep sub-micron CMOS transistors," IEEE Intl. Electron Devices Meeting, pp. 631-634, 1997.
    • (1997) IEEE Intl. Electron Devices Meeting , pp. 631-634
    • Tuinhout, H.P.1    Montree, A.H.2    Schmitz, J.3    Stolk, P.A.4
  • 14
    • 33646937180 scopus 로고    scopus 로고
    • CMOS RF integrate circuits at 5 GHz and beyond
    • October
    • T. H. Lee and S. S. Wong, "CMOS RF integrate circuits at 5 GHz and beyond," Proceedings of the IEEE, pp. 1560-1578, October 2000.
    • (2000) Proceedings of the IEEE , pp. 1560-1578
    • Lee, T.H.1    Wong, S.S.2
  • 15
    • 0036045246 scopus 로고    scopus 로고
    • Extended 0.1 sum technology for ultra-high-speed and MS/RF applications
    • C. S. Chang et al., "Extended 0.1 Sum technology for ultra-high-speed and MS/RF applications," IEEE VLSI Technology Symposium, pp. 68-69, 2002.
    • (2002) IEEE VLSI Technology Symposium , pp. 68-69
    • Chang, C.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.