Post treatments of plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon carbide for low dielectric constant films

Thin Solid Films

Volumn 497, Issue 1-2, 2006, Pages 109-114

  Lahlouh, B ^a   Rajagopalan, T ^a   Biswas, N ^a   Sun, J ^b   Huang, D ^b   Simon, S L ^b   Lubguban, J A ^c   Gangopadhyay, S ^c  

^a TEXAS TECH UNIVERSITY   (United States)

^b Texas Tech University   (United States)

^c University of Missouri   (United States)

Author keywords

Chemical vapor deposition (CVD); Dielectrics; Heat treatment; Silicon carbide

Indexed keywords

AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; HEAT TREATMENT; HYDROGENATION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

FILM THICKNESS; FUNCTIONAL GROUPS; MOLECULAR VOIDS; POST TREATMENTS;

SILICON CARBIDE;

EID: 30344482247     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.10.085     Document Type: Article

References (24)

1. J. Simpson, and A. St. Clair Thin Solid Films 480 1997 308
2. J. Golden, C. Hawker, and P. Ho Semicond. Int. 24 2001 79
3. S. Sugahara, K. Usami, and M. Matsumura Jpn. J. Appl. Phys. 38 1999 1428
4. D. Kim, Y. Lee, and N. Park Appl. Phys. Lett. 69 1996 2779
5. J.A. Lubguban, S. Gangopadhyay, B. Lahlouh, T. Rajagopalan, N. Biswas, J. Sun, D.H. Huang, S.L. Simon, A. Mallikarjunan, H.-C. Kim, J. Hedstrom, W. Volksen, R.D. Miller, and M.F. Toney J. Mater. Res. 19 2004 3224
6. M. Colomer Mater. Res. Soc. Symp. Proc. 565 1999 211
7. P. Kohl, A. Padovani, M. Wedlake, D. Bhusari, S. Ann, B. Allen, R. Shick, and L. Rhodes Mater. Res. Soc. Symp. Proc. 565 1999 55
8. J. Hong, H. Kim, and H. Park Thin Solid Films 332 1998 449
9. A. Grill, and V. Patel Appl. Phys. Lett. 79 2001 803
10. P. Wang, S. Ding, D. Zhang, J. Wang, and W. Lee Thin Solid Films 385 2001 115
11. A. Grill, and D.A. Neumayer J. Appl. Phys. 94 2003 6697
12. A. Grill, V. Patel, K.P. Rodbell, E. Huang, M.R. Baklanov, K.P. Mogilnikov, M. Toney, and H.C. Kim J. Appl. Phys. 94 2003 3427
13. S.K. Kwak, K.H. Jeong, and S.W. Rhee J. Electrochem. Soc. 151 2004 F11
14. J.A. Lubguban, J. Sun, T. Rajagopalan, B. Lahlouh, S.L. Simon, and S. Gangopadhyay Appl. Phys. Lett. 81 2002 4407
15. T. Rajagopalan, B. Lahlouh, J.A. Lubguban, N. Biswas, S. Gangopadhyay, J. Sun, D.H. Huang, S.L. Simon, A. Mallikarjunan, H.-C. Kim, W. Volksen, M.F. Toney, E. Huang, P.M. Rice, E. Delenia, and R.D. Miller Appl. Phys. Lett. 82 2003 4328
16. S.K. Goel, and E.J. Beckman Polym. Eng. Sci. 34 1994 1137
17. T. Rajagopalan, X. Wang, B. Lahlouh, C. Ramkumar, P. Dutta, and S. Gangopadhyay J. Appl. Phys. 94 2003 5252
18. F. Demichells, C.F. Pirri, and E. Tresso J. Appl. Phys. 72 1992 1327
19. A. Desalvo, F. Giorgis, C.F. Pirri, E. Tresso, P. Rava, R. Galloni, R. Rizzoli, and C. Summonte J. Appl. Phys. 81 1997 7973
20. A. Grill, and V. Patel J. Appl. Phys. 85 1999 3314
21. G. Socrates Infrared Characteristics Group Frequencies 1994 J. Wiley New York, NY Chap. 18
22. T. Schwarz-Selinger, A. von Keudell, and W. Jacob J. Appl. Phys. 86 1999 3988
23. A. Grill, and V. Patel Mater. Res. Soc. Symp. Proc. 612 2000 D2.9.1
24. K. Maex, M.R. Baklanov, D. Shamiryan, F. Iacopi, S.H. Brongersma, and Z.S. Yanovitskaya J. Appl. Phys. 93 2003 8793