Impact of nitrogen incorporation on interface states in (100) SiHf O2

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Fedorenko, Y G ^a,c   Truong, L ^a   Afanas'Ev, V V ^a   Stesmans, A ^a   Zhang, Z ^b   Campbell, S A ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b University of Minnesota   (United States)

^c ASM Europe BV   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTANCE ANALYSIS; CAPACITANCE-VOLTAGE; INTERFACE TRAPS; SI BAND GAP;

ANNEALING; ELECTRIC CONDUCTANCE; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; HYDROGEN; INTERFACES (MATERIALS); MONOLAYERS; PASSIVATION; SILICON COMPOUNDS;

NITROGEN;

EID: 29744459686     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140871     Document Type: Review

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