25.5% efficient Ga0.35In0.65P/Ga0.83In0.17As tandem solar cells grown on GaAs substrates

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 209-211

  Dimroth, F ^a   Schubert, U ^a   Bett, A W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TUNNEL DIODES;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; GALLIUM INDIUM ARSENIDE; GALLIUM INDIUM PHOSPHIDE; POWER CONVERSION EFFICIENCY; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 0033740560     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841298     Document Type: Article

References (14)

1. R. W. Hoffman, Jr. et al., "High efficient InGaAs-on-GaAs devices for monolithic multi-junction solar cell applications," in Proc. 2nd WCPEC, Vienna, Austria, 1998, pp. 3604-3608.
2. T. Uchida, H. Kurakake, H. Soda, and S, Yamazaki, "A 1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate," J. Electron. Mater., vol. 12, p. 581, 1996.
3. W. Dobbelaere et al., "InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy," Appl. Phys. Lett, vol. 60, p. 868, 1992.
4. J. F. Valtuena et al., "Influence of the surface morphology on the relaxation of low-strained InGaAs linear buffer structures," J. Cryst. Growth, vol. 182, pp. 281-291, 1997.
5. D. Gonzalez, D. Araujo, G. Aragon, and R. Garcia, "Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems," Appl. Phys. Lett., vol. 72, pp. 1875-1877, 1998.
6. M. T. Bulsara, C. Leitz, and A. Fitzgerald, "Relaxed InGaAs graded buffers grown with organometallic vapor phase epitaxy on GaAs," Appl. Phys. Lett., vol. 72, pp. 1608-1610, 1998.
7. C. Lobo and R. Leon, "InGaAs island shapes and adatom migration behavior on (100), (110), (111) and (311) GaAs surfaces," J. Appl. Phys., vol. 83, pp. 4168-4172, 1998.
8. g = 1.15 eV) concentrator solar cells and the influence of lattice mismatch on performance," Appl. Phys. Lett., vol. 43, pp. 468-470, 1983.
9. C. R. Lewis et al., "A two-terminal, two-junction monolithic cascade solar cell in a lattice-mismatched system," in Proc. 18th IEEE PVSC, Las Vegas, NV, 1985, pp. 556-561.
10. J. C. Schultz et al., "Development of high-quantum-efficiency, lattice-mismatched, 1.0-eV GaInAs solar cells," J. Electron. Mater., vol. 22, pp. 755-761, 1993.
11. F. Dimroth, P. Lanyi, U. Schubert, and A. W. Bett, "MOVPE grown GaInAs solar cells for GaInP/GaInAs tandem applications," J. Electron. Mater., vol. 29, pp. 42-46, 2000.
12. F. Dimroth, U. Schubert, and A. W. Bett, "High C-doping MOVPE grown thin AlGaAs layers for AlGaAs/GaAs interband tunneling devices," J. Electron. Mater., vol. 29, no. 1, pp. 47-52, 2000.
13. T. Takamoto, E. Ikeda, H. Kurita, and M Ohmori, "Over 30% efficient InGaP/GaAs tandem solar cells," Appl. Phys. Lett., vol. 70, pp. 381-383, 1997.
14. D. J. Friedman et al., "30.2% efficient GaInP/GaAs monolithic two-terminal tandem concentrator cell," Progr. Photovolt, vol. 3, pp. 47-50, 1995.