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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1200-1204

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

(9) Baklenov, O a Lubyshev, D a Wu, Y a Fang, X M a Fastenau, J M a Leung, L a Towner, F J a Cornfeld, A B a Liu, W K a

a IQE INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL LATTICES; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LATTICE-MATCHED SUBSTRATES; METAMORPHIC STRUCTURES;

HETEROJUNCTIONS;

EID: 0035998559 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1481751 Document Type: Article

Times cited : (10)

References (10)

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2
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