Lattice strain relaxation study in the Ga1-xAlxSb/GaSb system by high resolution x-ray diffraction

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1549-1551

  Bocchi, C ^a   Bosacchi, A ^a   Franchi, S ^a   Gennari, S ^b   Magnanini, R ^b   Drigo, A V ^c  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004586378     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119962     Document Type: Article

References (15)

1. J.H. van der Merwe, J. Appl. Phys. 34, 117 (1963).
2. J.H. van der Merwe, J. Appl. Phys. 34, 123 (1963).
3. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
4. B.W. Dodson and J.V. Tsao, Appl. Phys. Lett. 51, 1325 (1987).
5. B.W. Dodson and J.V. Tsao, Appl. Phys. Lett. 52, 852 (1988).
6. R. People and J.C. Bean, Appl. Phys. Lett. 47, 322 (1985).
7. R. People and J.C. Bean, Appl. Phys. Lett. 49, 229 (1986).
8. P.M.J. Marée, J.C. Barbour, and J.F. van der Veen, J. Appl. Phys. 62, 4413 (1987).
9. H.-J. Gossmann, B.A. Davidson, G.J. Gualtieri, O.P. Schwartz, A.T. Macrander, S.E. Slusky, M.H. Grabow, and W.A, Sunder, J. Appl. Phys. 66, 1687 (1989).
10. C. Bocchi, A. Bosacchi, C. Ferrari, S. Franchi, P. Franzosi, R. Magnanini, and L. Nasi, J. Cryst. Growth 165, 8 (1996).
11. M. Servidori, F. Cembali, R. Fabbri, and A. Zani, J. Appl. Crystallogr, 25, 46 (1992).
12. W.J. Bartels and H. Veenvliet, Inst. Phys. Conf. Ser. 45, 229 (1979).
13. For a review, see: Landolt-Bornstein, Semiconductors (Springer, Berlin, 1987), Vol. 17, Subvol. A.
14. A.V. Drigo, A. Aydinli, A. Carnera, F. Geneva, C. Rigo, C. Ferrari, P. Franzosi, and G. Salviati, J. Appl. Phys. 66, 1975 (1989).
15. P. Franzosi, L. Francesio, and S. Gennari, Mater. Sci. Forum 203, 223 (1996).