High power 0.25 μm gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

Electronics Letters

Volumn 39, Issue 6, 2003, Pages 566-567

  Youn, D H ^a   Kumar, V ^c   Lee, J H ^b   Schwindt, R ^c   Chang, W J ^a   Hong, J Y ^a   Jeon, C M ^d   Bae, S B ^a   Park, M R ^a   Lee, K S ^a   Lee, J L ^d   Adesida, I ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyungpook National University   (South Korea)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; CURRENT DENSITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SHORT CIRCUIT CURRENTS; TRANSCONDUCTANCE;

POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037456885     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030339     Document Type: Article

References (12)

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