Growth of self-aligned crystalline cobalt silicide nanostructures from Co nanoparticles

Journal of Physical Chemistry B

Volumn 108, Issue 22, 2004, Pages 6901-6904

  Carter, Joshua D ^a   Cheng, Guangjun ^a   Guo, Ting ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SUBSTRATES; DEVICE FABRICATION; NANOELECTRONICS; SELF-ALIGNED NANOSTRUCTURES (SAN);

CRYSTALLINE MATERIALS; ELECTRIC CONTACTS; LITHOGRAPHY; MONOLAYERS; NANOSTRUCTURED MATERIALS; THERMODYNAMIC STABILITY;

COBALT COMPOUNDS;

EID: 2942731598     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0499326     Document Type: Article

References (25)

1. Iijima, S.; Ichihashi, T. Nature 1993, 364, 737-737.
2. Hu, J. T.; Odom, T. W.; Lieber, C. M. Acc. Chem. Res. 1999, 32, 435-445.
3. Kong, Y. C.; Yu, D. P.; Zhang, B.; Fang, W.; Feng, S. Q. Appl. Phys. Lett. 2001, 78, 407-409.
4. Viernow, J.; Lin, J. L.; Petrovykh, D. Y.; Leibsle, F. M.; Men, F. K.; Himpsel, F. J. Appl. Phys. Lett. 1998, 72, 948-950.
5. Chen, Y.; Ohlberg, D. A. A.; Medeiros-Ribeiro, G.; Chang, Y. A.; Williams, R. S. Appl. Phys. Lett. 2000, 76, 4004-4006.
6. Liu, B. Z.; Nogami, J. J. Appl. Phys. 2003, 93, 593-599.
7. Ragan, R.; Chen, Y.; Ohlberg, D. A. A.; Medeiros-Ribeiro, G.; Williams, R. S. J. Cryst. Growth 2003, 251, 657-661.
8. Rhee, H. S.; Ahn, B. T. Appl. Phys. Lett. 1999, 74, 3176-3178.
9. Kluth, P.; Zhao, Q. T.; Winnerl, S.; Lenk, S.; Mantl, S. Microelectron. Eng. 2002, 64, 163-171.
10. Reader, A. H.; Vanommen, A. H.; Weijs, P. J. W.; Wolters, R. A. M.; Oostra, D. J. Rep. Prog. Phys. 1993, 56, 1397-1467.
11. Maex, K. Mater. Sci. Eng., R 1993, 11, 53-153.
12. Moshfegh, A. Z.; Hashemifar, S. J.; Akhavan, O. Solid State Commun. 2003, 128, 239-244.
13. Herner, S. B.; Mahajani, M.; Konevecki, M.; Kuang, E.; Radigan, S.; Dunton, S. V. Appl. Phys. Lett. 2003, 82, 4163-4165.
14. Ishida, K.; Miura, Y.; Hirose, K.; Harada, S.; Narusawa, T. Appl. Phys. Lett. 2003, 82, 1842-1844.
15. Zhao, Q. T.; Kluth, P.; Winnerl, S.; Lenk, S.; Mantl, S. Microelectron. Eng. 2002, 64, 443-447.
16. Puntes, V. F.; Krishnan, K. M.; Alivisatos, A. P. Science 2001, 291, 2115-2117.
17. Su, M.; Li, Y.; Maynor, B.; Buldum, A.; Lu, J. P.; Liu, J. J. Phys. Chem. B 2000, 104, 6505-6508.
18. Alberti, A.; La Via, F.; Spinella, C.; Rimini, E. Microelectron. Eng. 2001, 55, 163-169.
19. Kang, B. S.; Oh, S. K.; Kang, H. J.; Sohn, K. S. J. Phys.: Condens. Matter 2003, 15, 67-76.
20. Lin, S. H.; Mack, I.; Pongkrapan, N.; Fraundorf, P. Electrochem. Solid-State Lett. 2002, 5, G83-G85.
21. Donaton, R. A.; Maex, K.; Vantomme, A.; Langouche, G.; Morciaux, Y.; Stamour, A.; Sturm, J. C. Appl. Phys. Lett. 1997, 70, 1266-1268.
22. Lee, M. Y.; Bennett, P. A. Phys. Rev. Lett. 1995, 75, 4460-4463.
23. Chong, R. K. K.; Yeadon, M.; Choi, W. K.; Stach, E. A.; Boothroyd, C. B. Appl. Phys. Lett. 2003, 82, 1833-1835.
24. Murarka, S. P. Suicide for VLSI Applications; Academic Press: New York, 1983.
25. Suicide Thin Films - Fabrication, Properties, and Applications; Tung, R., Maex, K., Pellegrini, P. W., Allen, L. H., Eds.; MRS: Boston, MA, 1996; Vol. 402.