In situ growth of an epitaxial CoSi2 layer on a Si (100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3176-3178

  Rhee, Hwa Sung ^a   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COBALT COMPOUNDS; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

COBALT DISILICIDE;

CONDUCTIVE FILMS;

EID: 0032614848     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124067     Document Type: Article

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