High-performance UMOSFETs in 4H-SiC

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1191-1194

  Li, Y ^a   Cooper, J A ^a   Capano, M A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Edge termination; JTE; MOSFETs; Power devices; SiC; Trench; UMOSFET

Indexed keywords

MOSFET DEVICES; TRENCHING; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

BLOCKING VOLTAGE; DOPED CHANNELS; EDGE TERMINATION; JUNCTION TERMINATION EXTENSIONS; MOSFETS; POWER DEVICES; SPECIFIC-ON RESISTANCE; UMOSFET; TRENCH OXIDE PROTECTION;

SILICON CARBIDE; MOSFET DEVICES;

EID: 0036429058     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1191     Document Type: Conference Paper

References (9)

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