Diffusion of light elements in diamond

Defect and Diffusion Forum

Volumn 226-228, Issue 1, 2004, Pages 31-48

  Saguy, C ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Defects; Diffusion; Electrical Properties; Interstitials; Ion Implantation; Monocrystalline Diamond; Polycrystalline CVD Diamond; SIMS; Substitutionais; Trapping

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPLEXATION; CRYSTAL DEFECTS; DIAMOND FILMS; DIFFUSION; DOPING (ADDITIVES); ELECTRIC FIELDS; ENERGY GAP; IONIZATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SOLUBILITY;

FORCED DIFFUSION; INTERSTITIALS; MIGRATION ENERGY; MILD TEMPERATURE; MONOCRYSTALLINE DIAMONDS; SUBSTITUTIONALS; TRAPPING;

DIAMONDS;

EID: 2942672776     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.226-228.31     Document Type: Article

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