Ion channeling studies of hydrogen in homoepitaxially grown CVD diamond

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 411-415

  Haug, C ^a   Gartner H ^a   Portmann, J ^a   Samlenski, R ^a   Wild, C ^b   Brenn, R ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Characterization; CVD diamond films; Hydrogen; RBS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; HYDROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION CHANNELING MEASUREMENTS;

DIAMONDS;

DIAMOND;

EID: 0035269502     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00372-1     Document Type: Article

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