Low-frequency noise in advanced CMOS/SOI devices

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 2, 2004, Pages 111-117

  Jomaah, J ^a   Balestra, F ^a  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE;

GATE VOLTAGE; LORENTZIAN SPECTRUM; LOW FREQUENCY NOISE;

MOS DEVICES;

EID: 2942668143     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040109     Document Type: Article

References (20)

1. Gierkink, S.L.K., Klumperink, E.A.M., van-der-Wel, A.P., Hoogzaad, G., van-Tuijl, E.A., and Nauta, B.: 'Intrinsic 1/f device noise reduction and its effect on phase noise in CMOS ring oscillators', IEEE Solid-State Circuits, 1999, 34, p. 1022
2. Nemirovsky, Y., Brouk, I., and Jakobson, C.G.: '1/f noise in CMOS transistors for analog applications', IEEE Trans. Electron Devices, 2001, 48, p. 921
3. Jomaah, J., and Balestra, F.: 'An overview of low-frequency noise in advanced CMOS/SOI transistors', Proc. SPIE-Int. Soc Opt. Eng., 2003, 5113, pp. 159-167
4. McWhorter, A.L.: 'Semiconductor surface physics' (University of Pennsylvania Press, Philadelphia, USA, 1957), p. 207
5. Ghibaudo, G., Roux, O., Nguyen-Duc, Ch., Balestra, F., and Brini, J.: 'Improved analysis of low frequency noise in field-effect MOS transistors', Phys. Status Solidi. A, 1991, 124, p. 571
6. Christensson, S., Lundstrom, I., and Svensson, C.: 'Low-frequency noise in MOS transistors-I', Solid State Electron., 1968, 11, pp. 797-812
7. Kolarova, R., Skotnicki, T., and Chroboczek, J.A.: 'Low-frequency noise in thin gate oxide MOSFETs', Microelectron. Reliab, 2000, 41, pp. 579-585
8. Chen, J., Fang, P., Ko, P.K., Hu, C., Solomon, R., Chan, T.Y., and Sodini, C.G.: 'Noise overshoot at drain current kink in SOI MOSFET'. Proc. IEEE SOI Conf., Keywest FL, USA, 1990, pp. 40-41
9. Simoen, E., Magnusson, U., Rotondaro, A.L.P., and Claeys, C.: 'The kink-related excess low-frequency noise in silicon-on-insulator MOST's', IEEE Electron Device Lett., March 1994, 41, pp. 330-339
10. Jin, W., Chan, P.C.H., Fung, S.K.H., and Ko, P.K., 'Shot-noise-induced excess low frequency noise in floating-body partially depleted SOI MOSFET's', IEEE Trans. Electron Devices, 1999, 46, pp. 1180-1185
11. Tseng, Y.-C., Huang, W.M., Welch, P.J., Ford, J.M., and Woo, J.C.S.: 'Empirical correlation between AC kink and low frequency noise overshoot in SOI MOSFETs', IEEE Electron Device Lett., 1998, 19, (5), pp. 157-159
12. Haendler, S., Jomaah, J., Ghibaudo, G., and Balestra, F.: 'Improved analysis of low frequency noise in dynamic threshold (DT) MOS/SOI transistors', Microelectron. Reliab., 2001, 41, pp. 855-860
13. Dieudonné, F., Rozeau, O., Jomaah, J., and Balestra, F.: 'Direct gate tunneling related excess noise in ultra-thin gate oxide partially depleted SOI MOSFETs'. Proc 4th European Workshop on Ultimate Integration of Silicon, ULIS' 2003, Udine, Italy, (March 2003), pp. 81-84
14. Dieudonné, F., Haendler, S., Jomaah, J., and Balestra, F.: 'Low frequency noise in 0.12μm partially and fully depleted SOI technology', Microelectron. Reliab., 2003, 43, (2), pp. 243-248
15. Dieudonné, F., Haendler, S., Jomaah, J., and Balestra, F.: 'Shrinking from 0.25 down to 0.12μm SOI CMOS technology node: a contribution to low frequency noise in partially depleted N-MOSFETs', Solid-State Electron., 2003, 47, pp. 1213-1218
16. Agarwal, A.K., Driver, M.C., Hanes, M.H., Hodgood, H.M., McMullin, P.G., Nathanson, H.C., O'Keeffe, T.W., Smith, T.J., Szedon, J.R., and Thomas, R.N.: 'MICROX™ - An advanced silicon technology for microwave circuits up to X-band'. IEDM Tech. Dig., Washington, DC, USA, Dec. 1991, pp. 687-690
17. Eggert, D., Huebler, P., Huerrich, A., Kuerck, H., Budde, W., and Vorwerk, M.: 'A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz', IEEE Trans. Electron Devices, 1997, 44, (11), pp. 1981-1989
18. Rozeau, O., Jomaah, J., Haendler, S., Boussey, J., and Balestra, F.: 'SOI technologies overview for low-power low-voltage radio-frequency applications', Analog Integr. Circuits Signal Process., 2000, 25, pp. 93-114
19. Lee, W.-C., and Hu, C.: 'Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling', IEEE Trans. Electron Devices, 2001, 48, pp. 1366-1373
20. Pretet, J., Matsumoto, T., Poiroux, T., Cristoloveanu, S., Gwoziecki, R., Raynaud, C., Roveda, A., and Brut, H.: 'New mechanism of body charging in partially depleted SOI-MOSFETs with ultra-thin gate oxides'. Proc. 32nd ESSDERC, Firenze, Italy, September 2002, pp. 515-518