Important research targets to be explored for β-FeSi2 device making

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 202-208

  Makita, Y ^a,b   Nakayama, Y ^a   Fukuzawa, Y ^a   Wang, S N ^a   Otogawa, N ^a   Suzuki, Y ^c   Liu, Z X ^c   Osamura, M ^c   Ootsuka, T ^c   Mise, T ^c   Tanoue, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Tateyama Kagaku Ind Co Ltd   (Japan)

^c System Eng Co Ltd   (Japan)

Author keywords

FeSi2; Molecular beam epitaxy; Solar cell; Sputtering; Template layer

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ENERGY CONVERSION; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS; SOLAR CELLS; SPUTTERING; SUBSTRATES;

Β-FESI2; MIGRATION ENHANCED EPITAXY (MEE); REACTIVE DEPOSITION EPITAXY (RDE); TEMPLATE LAYER;

THIN FILMS;

EID: 2942650732     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.073     Document Type: Conference Paper

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