Fabrication of p-β-Fe1-xMnxSi2/n-Si heterostructure diode and their electrical and optical properties

Materials Research Society Symposium - Proceedings

Volumn 478, Issue , 1997, Pages 267-272

  Takada, T ^a   Katsumata, H ^a   Makita, Y ^a   Kobayashi, N ^a   Hasegawa, M ^a   Uekusa, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON BEAMS; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

ELECTRON BEAM DEPOSITION (EBD); IRON DISILICIDES;

SEMICONDUCTOR DIODES;

EID: 0030686301     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-478-267     Document Type: Conference Paper

References (12)