SCOPUS 정보 검색 플랫폼

Materials Science and Engineering R: Reports

Volumn 16, Issue 6-8, 1996, Pages 265-398

Novel features of photoluminescence spectra from acceptor-doped GaAs: Formation of acceptor-acceptor pair emissions and optical compensation effect

(1) Makita, Yunosuke a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

Acceptor acceptor pair emissions; Gallium arsenide; Optical compensation effect; Photoluminescence

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON EMISSION; EPITAXIAL GROWTH; ION BEAMS; IONS; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SUBSTRATES;

ACCEPTOR-ACCEPTOR PAIR EMISSIONS; ACCEPTOR-DOPED GALLIUM ARSENIDE; IMPURITY PROPERTIES; LOW ENERGY ION BEAM; MASS-SEPARATED CARBON IONS; OPTICAL COMPENSATION EFFECT; PHOTOLUMINESCENCE SPECTRA;

EMISSION SPECTROSCOPY;

EID: 0030163928 PISSN: 0927796X EISSN: None Source Type: Journal
DOI: 10.1016/0927-796X(95)00189-1 Document Type: Article

Times cited : (14)

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