C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design

Semiconductor Science and Technology

Volumn 18, Issue 8, 2003, Pages 738-744

  Chattopadhyay, S ^a   Kwa, K S K ^a   Olsen, S H ^a   Driscoll, L S ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ENERGY GAP; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

BAND OFFSETS; CAPACITANCE VOLTAGE CHARACTERIZATION; MULTIPLE HETEROJUNCTION CAPACITORS;

HETEROJUNCTIONS;

EID: 0041513287     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/8/304     Document Type: Article

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