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Volumn 86, Issue 1, 1998, Pages 7-28

The invention of the transistor

Author keywords

Bipolar transistors; History; Materials processing; MOSFET; Semiconductor device fabrication; Technological innovation; Transistors

Indexed keywords

ELECTRONICS INDUSTRY; INTEGRATED CIRCUIT MANUFACTURE; MICROELECTRONICS; MOSFET DEVICES; POINT CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; TECHNOLOGY;

EID: 0031696794     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.658752     Document Type: Article
Times cited : (43)

References (38)
  • 1
    • 36149025707 scopus 로고
    • Surface states and rectification at a metal semiconductor contact
    • May 15
    • J. Bardeen, "Surface states and rectification at a metal semiconductor contact," Phys. Rev., vol. 71, pp. 383-388, May 15, 1947.
    • (1947) Phys. Rev. , vol.71 , pp. 383-388
    • Bardeen, J.1
  • 2
    • 33646904301 scopus 로고
    • Indianapolis, IN: AT&T Bell Laboratories
    • Engineering & Science in the Bell System. Indianapolis, IN: AT&T Bell Laboratories, 1985, vol. 4.
    • (1985) Engineering & Science in the Bell System , vol.4
  • 3
    • 36149010714 scopus 로고
    • The transistor, a semi-conductor triode
    • July 15
    • J. Bardeen and W. H. Brattain, "The transistor, a semi-conductor triode," Phys. Rev., vol. 74, pp. 230-231, July 15, 1947.
    • (1947) Phys. Rev. , vol.74 , pp. 230-231
    • Bardeen, J.1    Brattain, W.H.2
  • 4
    • 84944485155 scopus 로고
    • The theory of p-n junctions in semiconductors and p-n junction transistors
    • July
    • W. Shockley, "The theory of p-n junctions in semiconductors and p-n junction transistors," Bell Syst. Tech. J., vol. 28, pp. 435-489, July 1949.
    • (1949) Bell Syst. Tech. J. , vol.28 , pp. 435-489
    • Shockley, W.1
  • 5
    • 0009381618 scopus 로고
    • Double-surface transistor
    • Feb. 15
    • J. N. Shive, "Double-surface transistor," Phys. Rev., vol. 75, pp. 689-690, Feb. 15, 1948.
    • (1948) Phys. Rev. , vol.75 , pp. 689-690
    • Shive, J.N.1
  • 6
    • 84865926618 scopus 로고
    • "Semiconductor translating device having controlled gain," U.S. Patent 2623 105, Dec. 23
    • W. Shockley and M. Sparks, "Semiconductor translating device having controlled gain," U.S. Patent 2623 105, Dec. 23, 1952.
    • (1952)
    • Shockley, W.1    Sparks, M.2
  • 7
    • 84865919039 scopus 로고
    • "Bistable circuits including transistors," U.S. Patent 2655609, Oct. 13
    • W. Shockley, "Bistable circuits including transistors," U.S. Patent 2655609, Oct. 13, 1953.
    • (1953)
    • Shockley, W.1
  • 9
    • 0000764773 scopus 로고
    • Growth of germanium single crystals
    • June
    • G. K. Teal and J. B. Little, "Growth of germanium single crystals," Phys. Rev., vol. 78, p. 647, June 1950.
    • (1950) Phys. Rev. , vol.78 , pp. 647
    • Teal, G.K.1    Little, J.B.2
  • 10
    • 0000600948 scopus 로고
    • Hole injection in germanium - Quantitative studies and filamentary transistors
    • July
    • W. Shockley, G. L. Pearson, and J. R. Haynes, "Hole injection in germanium - Quantitative studies and filamentary transistors," Bell Syst. Tech. J., vol. 28, pp. 344-366, July 1949.
    • (1949) Bell Syst. Tech. J. , vol.28 , pp. 344-366
    • Shockley, W.1    Pearson, G.L.2    Haynes, J.R.3
  • 13
    • 5944248984 scopus 로고
    • Fused impurity p-n-p transistors
    • Nov.
    • J. E. Saby, "Fused impurity p-n-p transistors," Proc. IRE, vol. 40, pp. 1358-1360, Nov. 1952.
    • (1952) Proc. IRE , vol.40 , pp. 1358-1360
    • Saby, J.E.1
  • 14
    • 84937350297 scopus 로고
    • Unipolar field-effect transistor
    • Aug.
    • G. C. Dacey and I. M. Ross, "Unipolar field-effect transistor" Proc. IRE, vol. 41, pp. 970-979, Aug. 1953.
    • (1953) Proc. IRE , vol.41 , pp. 970-979
    • Dacey, G.C.1    Ross, I.M.2
  • 15
    • 0000504080 scopus 로고
    • Growth of silicon single crystals and of single crystal silicon p-n junctions
    • July
    • G. K. Teal and E. Buehler, "Growth of silicon single crystals and of single crystal silicon p-n junctions," Phys. Rev., vol. 87, p. 190, July 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 190
    • Teal, G.K.1    Buehler, E.2
  • 16
    • 0000553594 scopus 로고
    • Principles of zone melting
    • July
    • W. G. Pfann, "Principles of zone melting," Trans. AIME, vol. 94, pp. 747-753, July 1952.
    • (1952) Trans. AIME , vol.94 , pp. 747-753
    • Pfann, W.G.1
  • 17
    • 0000689282 scopus 로고
    • Single crystals of germanium and silicon-Basic to the transistor and integrated circuit
    • July
    • G. K. Teal, "Single crystals of germanium and silicon-Basic to the transistor and integrated circuit," IEEE Trans. Electron Devices, vol. ED-23, pp. 136-137, July 1976.
    • (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 136-137
    • Teal, G.K.1
  • 18
    • 0345583923 scopus 로고
    • Diffusion of donor and acceptor elements into germanium
    • Apr.
    • C. S. Fuller, "Diffusion of donor and acceptor elements into germanium," Phys. Rev., pp. 23-34, vol. 86, Apr. 1952.
    • (1952) Phys. Rev. , vol.86 , pp. 23-34
    • Fuller, C.S.1
  • 19
    • 33646903338 scopus 로고
    • A high-frequency diffused base germanium transistor
    • Jan.
    • C. A. Lee, "A high-frequency diffused base germanium transistor," Bell Syst. Tech. J., vol. 35, pp. 1-22, Jan. 1956.
    • (1956) Bell Syst. Tech. J. , vol.35 , pp. 1-22
    • Lee, C.A.1
  • 20
    • 33646941073 scopus 로고
    • Diffused emitter and base silicon transistors
    • Jan.
    • M. Tannenbaum and D. E. Thomas, "Diffused emitter and base silicon transistors," Bell Syst. Tech. J., vol. 35, pp. 1401-1406, Jan. 1956.
    • (1956) Bell Syst. Tech. J. , vol.35 , pp. 1401-1406
    • Tannenbaum, M.1    Thomas, D.E.2
  • 21
    • 3343026644 scopus 로고
    • Effects of space-charge layer widening injunction transistors
    • Nov.
    • J. M. Early, "Effects of space-charge layer widening injunction transistors," Proc. IRE, vol. 40, p. 517, Nov. 1952.
    • (1952) Proc. IRE , vol.40 , pp. 517
    • Early, J.M.1
  • 22
    • 3943085626 scopus 로고
    • p-n-i-p and n-p-i-n junction transistor triodes
    • May
    • J. M. Early, "p-n-i-p and n-p-i-n junction transistor triodes," Bell Syst. Tech. J., vol. 33, pp. 1642-1643, May 1954.
    • (1954) Bell Syst. Tech. J. , vol.33 , pp. 1642-1643
    • Early, J.M.1
  • 24
    • 0000588944 scopus 로고
    • Surface protection and selective masking during diffusion in silicon
    • Sept.
    • C. J. Frosch and L. Derick, "Surface protection and selective masking during diffusion in silicon," J. Electrochem. Soc., vol. 104, pp. 151-162, Sept. 1957.
    • (1957) J. Electrochem. Soc. , vol.104 , pp. 151-162
    • Frosch, C.J.1    Derick, L.2
  • 25
    • 7444265783 scopus 로고
    • Photograving in transistor fabrication
    • F. J. Biondi, Ed. New York: Van Nostrand
    • J. Andrus and W. L. Bond, "Photograving in transistor fabrication," in Transistor Technology, vol. III, F. J. Biondi, Ed. New York: Van Nostrand, 1958.
    • (1958) Transistor Technology , vol.3
    • Andrus, J.1    Bond, W.L.2
  • 27
    • 84944488621 scopus 로고
    • Stabilization of silicon surfaces by thermally grown oxides
    • May
    • M. M. Atalla, E. Tannenbaum, and E. J. Scheibner, "Stabilization of silicon surfaces by thermally grown oxides," Bell Syst. Tech. J., vol. 38, pp. 749-783, May 1959.
    • (1959) Bell Syst. Tech. J. , vol.38 , pp. 749-783
    • Atalla, M.M.1    Tannenbaum, E.2    Scheibner, E.J.3
  • 28
    • 7444268999 scopus 로고
    • Silicon-silicon dioxide field induced surface devices
    • Pittsburgh, PA, June
    • D. Kahng and M. M. Atalla, "Silicon-silicon dioxide field induced surface devices," presented at the Solid State Research Conf., Pittsburgh, PA, June 1960.
    • (1960) Solid State Research Conf.
    • Kahng, D.1    Atalla, M.M.2
  • 29
    • 0009409485 scopus 로고
    • Planar silicon diodes and transistors
    • Mar.
    • J. A. Hoerni, "Planar silicon diodes and transistors," IRE Trans. Electron Devices, vol. ED-8, p. 178, Mar. 1961.
    • (1961) IRE Trans. Electron Devices , vol.ED-8 , pp. 178
    • Hoerni, J.A.1
  • 30
    • 0001193268 scopus 로고
    • Structure and sodium migration in silicon nitride films
    • Aug.
    • J. V. Dalton and J. Dorbek, "Structure and sodium migration in silicon nitride films," J. Electrochem Soc., vol. 115, pp. 865-868, Aug. 1968.
    • (1968) J. Electrochem Soc. , vol.115 , pp. 865-868
    • Dalton, J.V.1    Dorbek, J.2
  • 31
    • 33646908307 scopus 로고
    • U.S. Patent 3 108359, Oct. 29
    • G. E. Moore and R. N. Noyce, U.S. Patent 3 108359, Oct. 29, 1963.
    • (1963)
    • Moore, G.E.1    Noyce, R.N.2
  • 32
    • 34548035708 scopus 로고
    • Invention of the integrated circuit
    • July
    • J. S. Kilby, "Invention of the integrated circuit," IEEE Trans. Electron Devices, vol. ED-23, pp. 648-653, July 1976.
    • (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 648-653
    • Kilby, J.S.1
  • 33
    • 33646937500 scopus 로고
    • U.S. Patent 2981 887, Apr. 25
    • R. N. Noyce, U.S. Patent 2981 887, Apr. 25, 1961.
    • (1961)
    • Noyce, R.N.1
  • 34
    • 34548035708 scopus 로고
    • Invention of the integrated circuit
    • July
    • J. S. Kilby, "Invention of the integrated circuit," IEEE Trans. Electron Devices, vol. ED-23, p. 653, July 1976.
    • (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 653
    • Kilby, J.S.1
  • 35
    • 84922652843 scopus 로고
    • The path to the conception of the junction transistor
    • July
    • W. Shockley, "The path to the conception of the junction transistor," IEEE Trans. Electron Devices, vol. ED-23, p. 619, July 1976.
    • (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 619
    • Shockley, W.1
  • 37
    • 33646906916 scopus 로고    scopus 로고
    • personal communication. Mar.
    • R. W. Galvin, personal communication. Mar. 1996.
    • (1996)
    • Galvin, R.W.1
  • 38
    • 33646936949 scopus 로고    scopus 로고
    • personal communication, Aug.
    • M. Sparks, personal communication, Aug. 1996.
    • (1996)
    • Sparks, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.