Initial growth of GaN on sapphire(0 0 0 1) using an amorphous buffer layer formed at room temperature by RF-MBE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 275-281

  Ohshima, Naoki ^a   Yonezu, Hiroo ^a   Yamahira, Seiji ^a   Pak, Kangsa ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

GaN; GaN buffer; RF MBE; RHEED; Sapphire; Two step growth

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

RADIO FREQUENCY PLASMA ENHANCED NITROGEN GAS IRRADIATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18744419905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00258-9     Document Type: Article

References (18)

1. S. Strite, H. Morkoç, J. Vac. Sci. Technol. B 10 (1992) 1237.
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
3. S. Nakamura, T. Mukai, M. Senoh, Appl. Phys. Lett. 64 (1994) 1687.
4. K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, S. Minagawa, J. Appl. Phys. 79 (1996) 3487.
5. N. Grandjean, J. Massies, P. Vennéguès, M. Laügt, M. Leroux, Appl. Phys. Lett. 70 (1997) 643.
6. T.D. Moustakas, R.J. Molnar, T. Lei, G. Menon, C.R. Eddy Jr., Mater. Res. Soc. Symp. Proc. 242 (1992) 427.
7. H. Kawakami, K. Sakurai, K. Tsubouchi, N. Mikoshiba, Jpn. J. Appl. Phys. 27 (1988) L161.
8. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.
9. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, N. Sawaki, J. Crystal Growth 98 (1989) 209.
10. T. Sasaki, T. Matsuoka, J. Appl. Phys. 77 (1995) 192.
11. Z.-L. Weber, H. Sohn, N. Newman, J. Washburn, J. Vac. Sci. Technol. B 13 (1995) 1578.
12. X.J. Ning, F.R. Chien, P. Pirouz, J.W. Yang, M. Asif Khan, J. Mater. Res. 11 (1996) 580.
13. P. Vennegues, B. Beaumont, M. Vaille, A. Gibart, Appl. Phys. Lett. 70 (1997) 2434.
14. B.N. Sverdlov, G.A. Martin, H. Morçok, D.J. Smith, Appl. Phys. Lett. 67 (1995) 2063.
15. S. Tanaka, R.S. Kern, R.F. Davis, Appl. Phys. Lett. 66 (1995) 37.
16. F.A. Ponce, B.S. Krusor, J.S. Major, W.E. Plano, F. Welch, Appl. Phys. Lett. 67 (1995) 410.
17. K. Hiramatsu, H. Amano, K. Itoh, I. Akasaki, J. Crystal Growth 115 (1991) 381.
18. M. Ypshimoto, T. Maeda, T. Ohnishi, H. Koinuma, Appl. Phys. Lett. 67 (1995) 2615.