Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots

Philosophical Magazine Letters

Volumn 79, Issue 4, 1999, Pages 201-208

  Androussi, Y ^a   Benabbas, T ^a   Lefebvre, A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; FINITE ELEMENT METHOD; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DYNAMICAL DIFFRACTION THEORY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032657499     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008399177444     Document Type: Article

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