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Volumn 44, Issue 1, 2004, Pages 93-96

Reduction of Hydrogen-Induced Degradation by Using a Phosphorus-Implantation Process

Author keywords

Boron hydrogen bond; Hump; Hydrogen; Phosphorus implant

Indexed keywords


EID: 0842328993     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (15)
  • 9
    • 25944448813 scopus 로고    scopus 로고
    • San Fransisco, Dec.
    • C. Chen, et al., IEDM Tech. Digest (San Fransisco, Dec., 1996), p. 387.
    • (1996) IEDM Tech. Digest , pp. 387
    • Chen, C.1
  • 12
    • 0003679027 scopus 로고
    • McGrow-Hill, New York
    • S. Sze, VLSI Technology (McGrow-Hill, New York, 1988), p. 261.
    • (1988) VLSI Technology , pp. 261
    • Sze, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.