Growth and electrical properties of highly (0 0 1)-oriented Pb(Zr 0.52Ti0.48)O3 thin films on amorphous TiN buffered Si(1 0 0)

Sensors and Actuators, A: Physical

Volumn 125, Issue 2, 2006, Pages 335-339

  Zhu, T J ^a,b   Lu, L ^a   Lai, M O ^a,c,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b ZHEJIANG UNIVERSITY   (China)

^c Materials Science Group

^d Graduate Programs ^*

Author keywords

Buffer layers; Ferroelectric properties; Ferroelectric thin films; Orientation; Pulsed laser deposition

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRODES; LEAD COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; POLARIZATION; PULSED LASER DEPOSITION; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; FERROELECTRIC CAPACITORS; FERROELECTRIC PROPERTIES; ORIENTATION;

FERROELECTRIC THIN FILMS;

EID: 29144517396     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.06.027     Document Type: Article

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