Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)1-x/4O3 thin films

Journal of Materials Research

Volumn 14, Issue 4, 1999, Pages 1371-1377

  Kim, Seung Hyun ^a   Kim, Dong Joo ^a   Hong, JoonGoo ^a   Streiffer, S K ^a   Kingon, A I ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TRAPS; FATIGUE OF MATERIALS; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); IONS; LEAD COMPOUNDS; OXIDES; OXYGEN; POLARIZATION;

DEFECT DIPOLE COMPLEXES; ELECTRODES STRUCTURE; ELECTRONIC CHARGE TRAPPING; FERROELECTRIC ELECTRODE INTERACTION; IMPRINT; IONIC DEFECT SITES; OXYGEN VACANCIES; RUTHENIUM OXIDES; WALL PINNING;

THIN FILMS;

EID: 0032687436     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0187     Document Type: Article

References (25)

1. H. Adachi, T. Mitsuyu, O. Yamajaki, and K. Wasa, J. Appl. Phys. 60, 736 (1986).
2. J.F. Scott and C.A. Araujo, Science 246, 1400 (1989).
3. J. Chen, K.R. Udayakumar, K.G. Brooks, and L.E. Cross, J. Appl. Phys. 71, 4465 (1992).
4. A.B. Frazier, R.O. Warrington, and C. Fredrich, IEEE Trans. Ind. Electron. 42, 423 (1995).
5. D.L. Polla, Microelectronic Engin. 29, 51 (1995).
6. J.F. Scott, C.A. Paz de Araujo, and L.D. McMillan, Condensed News 1, 16 (1992).
7. J.F. Scott, Phys. World, 46 (Feb. 1995).
8. T. Mihara, H. Watanabe, and H. Yoshimori, Nikkei Electron. 581, 94 (1993).
9. I.K. Yoo, S.B. Desu, and J. Xing, in Ferroelectric Thin Films III, edited by B.A. Tuttle, E.R. Myers, S.B. Desu, and P.K. Larsen (Mater. Res. Soc. Symp. Proc. 310, Pittsburgh, PA, 1993), p. 165.
10. W.Y. Pan, C.F. Yue, and B.A. Tuttle, Ceram. Trans. 25, 385 (1992).
11. W.L. Warren, D. Dimos, G.E. Pike, B.A. Tuttle, M.V. Raymond, R. Ramesh, and J.T. Evans, Jr., Appl. Phys. Lett. 67, 866 (1995).
12. J. Lee, R. Ramesh, V.G. Keramidas, W.L. Warren, G.E. Pike, and J.T. Evans, Jr., Appl. Phys. Lett. 66, 1337 (1995).
13. W.Y. Pan, C.F. Yue, and B.A. Tuttle, Ceram. Trans. 25, 385 (1992).
14. I.K. Yoo and S.B. Desu, in Ferroelectric Thin Films II, edited by A.I. Kingon, E.R. Myers, and B. Tuttle (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), p. 323.
15. P.V. Lambeck and G.H. Jonker, Ferroelectrics 22, 729 (1978).
16. W.L. Warren, D. Dimos, and R.W. Waser, MRS Bulletin 21 (7), 40 (1996).
17. R.W. Schwartz, T.J. Boyle, S.J. Lockwood, M.B. Sinclair, D. Dimos, and C.D. Buchheit, Int. Ferroelectrics 7, 259 (1995).
18. G. Yi, Z. Wu, and M. Sayer, J. Appl. Phys. 64 (5), 2717 (1988).
19. S.H. Kim, Y.S. Choi, C.E. Kim, and Y.J. Oh, J. Mater. Res. 12, 1576 (1997).
20. S.H. Kim, J.G. Hong, J.C. Gunter, S.K. Streiffer, and A.I. Kingon, in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones, S.B. Desu, C.M. Foster, and I.K. Yoo (Mater. Res. Soc. Symp. Proc. 493, Warrendale, PA, 1998), p. 131.
21. G.J. Willems, D.J. Wouters, H.E. Maes, and R. Nouwen, Integrated Ferroelectrics 15, 19 (1997).
22. J.F. Chang and S.B. Desu, J. Mater. Res. 9, 955 (1994).
23. R.D. Shannon and C.T. Prewitt, Acta Crystallogr. 25, 925 (1969).
24. H.N. Al-Shareef, D. Dimos, W.L. Warren, and B.A. Tuttle, J. Appl. Phys. 80 (8), 4573 (1996).
25. W.L. Warren, B.A. Tuttle, D. Dimos, G.E. Pike, H.N. Al-Shareef, R. Ramesh, and J.T. Evans, Jr., Jpn. J. Appl. Phys. 35, 1521 (1996).