Schottky barrier height of TiN/p-type Si(100) evaluated by forward current-voltage and capacitance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 178-185

  Pelleg, Joshua ^a   Douhin, A ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HEAT TREATMENT; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; SPUTTERING; TEMPERATURE DISTRIBUTION;

NONIDEAL BEHAVIOR; ROOM TEMPERATURE;

TITANIUM NITRIDE;

EID: 29144523535     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1850104     Document Type: Article

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