Material removal mechanisms of oxide and nitride CMP with ceria and silica-based slurries - Analysis of slurry particles pre- and post-dielectric CMP

Materials Research Society Symposium Proceedings

Volumn 816, Issue , 2004, Pages 257-268

  Chandrasekaran, Naga ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; DIELECTRIC MATERIALS; HARDNESS; NITRIDES; ORGANIC COATINGS; PARTICLE SIZE ANALYSIS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICA; SLURRIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ISOELECTRIC POINT (IEP); MATERIALS REMOVAL MECHANISMS; SHALLOW TRENCH ISOLATION (STI); SILICA-BASED SLURRIES;

CHEMICAL MECHANICAL POLISHING;

EID: 12744272448     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-816-k9.2     Document Type: Conference Paper

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