Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2288-2291

  Pan, A ^d   Wang, Y L ^e   Wu, C S ^a   Chen, C D ^a   Liu, N W ^b,c  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d VIVEKANANDA COLLEGE   (India)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM COMPOUNDS; ION BEAMS; ION IMPLANTATION; MICROMETERS; NANOSTRUCTURED MATERIALS; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

DEVICE-TO-DEVICE FLUCTUATION; FOCUSED ION BEAM; MASKLESS IMPLANTATION; NANOCHANNELS;

SUBSTRATES;

EID: 29044439018     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2101599     Document Type: Article

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