Characterization of trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interface by back gate transconductance characteristics in SOI MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2004-2008

  Nakajima, Yoshikata ^a   Tomita, Hideki ^a   Aoto, Kenichi ^a   Ito, Nobuhiro ^a   Hanajiri, Tatsuro ^a   Toyabe, Toru ^a   Morikawa, Takitaro ^a   Sugano, Takuo ^a  

^a TOYO UNIVERSITY   (Japan)

Author keywords

Acceptor like electron traps; Back gate transconductance; Donor like hole traps; Eltran; Kink effect; Low dose SIMOX; SOI; Traps

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSCONDUCTANCE;

ACCEPTOR LIKE ELECTRON TRAPS; BACK GATE TRANSCONDUCTANCE; BURIED OXIDE INTERFACE; DONOR LIKE HOLE TRAPS; KINK EFFECT; TRAP STATES;

MOSFET DEVICES;

EID: 0037672100     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2004     Document Type: Article

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