Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 81, Issue 11, 2001, Pages 1725-1744

  Bright, A N ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035526176     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810110079962     Document Type: Article

References (16)

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