HfO2 MIS structures with a silicon nitride barrier layer

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 188-190

  Ota, H ^a   Migita, S ^a   Morita, Y ^a   Sakai, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; RECONFIGURABLE HARDWARE; SILICON NITRIDE;

BARRIER LAYERS; MIS STRUCTURE; NITRIDE LAYERS; RADICAL SOURCE; RF PLASMA;

HAFNIUM OXIDES;

EID: 2342609042     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967580     Document Type: Conference Paper

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