A stochastic model for the effects of pad surface topography evolution on material removal rate decay in chemical-mechanical planarization

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 4, 2005, Pages 695-708

  Wang, Changxue ^b,c   Sherman, Peter ^a,c,d,e   Chandra, Abhijit ^b  

^a IEEE   (United States)

^b Iowa State University   (United States)

^c IOWA STATE UNIVERSITY   (United States)

^d ASME   (United States)

^e NONE   (United States)

Author keywords

Chemical mechanical planarization or polishing (CMP); Elastic and inelastic contact; Material removal rate (MRR) decay; Pad surface topography evolution; Pearson probability density function (pdf)

Indexed keywords

MATERIAL REMOVAL RATE (MRR) DECAY; PAD SURFACE TOPOGRAPHY EVOLUTION; PEARSON PROBABILITY DENSITY FUNCTION (PDF);

CHEMICAL MECHANICAL POLISHING; ELASTICITY; PROBABILITY DENSITY FUNCTION; RANDOM PROCESSES;

SURFACE TOPOGRAPHY;

EID: 28644450608     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.858516     Document Type: Conference Paper

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