A model for wafer scale variation of material removal rate in chemical mechanical polishing based on viscoelastic pad deformation

Journal of Electronic Materials

Volumn 31, Issue 10 SPEC., 2002, Pages 1066-1073

  Fu, Guanghui ^a   Chandra, Abhijit ^a  

^a Iowa State University of Science and Technology   (United States)

Author keywords

Chemical mechanical polishing (CMP); Material rate decay; Viscoelastic pad effects; Wafer scale analysis; Wafer to wafer nonuniformity (WTWNU); Within wafer nonuniformity (WIWNU)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DEFORMATION; INTERFACES (MATERIALS); PRESSURE EFFECTS; PROCESS CONTROL; THICKNESS CONTROL; VISCOELASTICITY;

MATERIAL REMOVAL RATE;

WSI CIRCUITS;

EID: 0036809709     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0044-4     Document Type: Conference Paper

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