Breakup of the conduction band structure of dilute Ga As1-y Ny alloys

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 19, 2005, Pages

  Patane A ^a   Endicott, J ^a   Ibanez J ^a,d   Brunkov, P N ^a,e   Eaves, L ^a   Healy, S B ^b   Lindsay, A ^b   O'Reilly, E P ^b   Hopkinson, M ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28544452407     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.195307     Document Type: Article

References (38)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.35.1273 35, 1273 (1996).
2. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.31.L853 31, L853 (1992).
3. Special issues: III-N-V Semiconductor Alloys [Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/1/301 17, 1 (2002)]
4. and Dilute Nitrides [J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/16/1/001 16, 1 (2004)].
5. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.1221 82, 1221 (1999).
6. A. Lindsay and E. P. O'Reilly, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(99)00361-0 112, 443 (1999).
7. P. R. C. Kent and A. Zunger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.115208 64, 115208 (2001).
8. Y. Zhang, B. Fuegel, M. C. Hanna, J. F. Geisz, L. W. Wang, and A. Mascarenhas, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200303329 240, 396 (2003).
9. L-W. Wang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88. 256402 88, 256402 (2002).
10. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.7479 61, 7479 (2000).
11. P. N. Hai, W. M. Chen, I. A. Buyanova, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1311324 77, 1843 (2000).
12. D. L. Young, J. F. Geisz, and T. J. Coutts, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1554777 82, 1236 (2003).
13. Y. J. Wang, X. Wei, Y. Zhang, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1584789 82, 4453 (2003).
14. F. Masia, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, M. Capizzi, P. J. Klar, and W. Stolz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1586787 82, 4474 (2003).
15. D. J. Wolford, J. A. Bradley, K. Fry, and J. Thompson, in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by, J. D. Chadi, and, W. A. Harrison, (Springer-Verlag, New York, 1984), p. 627.
16. X. Liu, M. E. Pistol, L. Samuelson, S. Schwetlick, and W. Seifert, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.102495 56, 1451 (1990).
17. T. Makimoto, H. Saito, T. Nishida, and N. Kobayashi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118764 70, 2984 (1997).
18. S. Francoeur, S. A. Nikishin, C. Jin, Y. Qiu, and H. Temkin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124748 75, 1538 (1999).
19. Y. Zhang and A. Mascarenhas, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.15562 61, 15562 (2000).
20. Y. Zhang, A. Mascarenhas, J. F. Geisz, H. P. Xin, and C. W. Tu, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.085205 63, 085205 (2001).
21. Y. J. Wang, X. Wei, Y. Zhang, A. Mascarenhas, H. P. Xin, Y. G. Hong, and C. W. Tu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1584789 82, 4453 (2003).
22. Y. Zhang, B. Fluegel, M. C. Hanna, A. Mascarenhas, L. W. Wang, Y. J. Wang, and X. Wei, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.075210 68, 075210 (2003).
23. J. Endicott, A. Patanè, J. Ibanez, L. Eaves, M. Bissiri, M. Hopkinson, R. Airey, and G. Hill, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.126802 91, 126802 (2003).
24. D. Fowler, O. Makarovsky, A. Patanè, L. Eaves, L. Geelhaar, and H. Riechert, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.153305 69, 153305 (2004).
25. S. Fahy and E. P. O'Reilly, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1622444 83, 3731 (2003).
26. J. B. Gunn, Solid State Commun. SSCOA4 0038-1098 10.1016/S0038-1098(97) 00089-6 1, 88 (1963).
27. L. Esaki and R. Tsu, IBM J. Res. Dev. IBMJAE 0018-8646 14, 61 (1970).
28. A. Lindsay and E. P. O'Reilly, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.196402 93, 196402 (2004).
29. E. F. Schubert, F. Capasso, A. L. Hutchinson, S. Sen, and A. C. Gossard, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.103752 57, 2820 (1990).
30. S. B. Zhang and S. H. Wei, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.86.1789 86, 1789 (2001).
31. P. Krispin, S. G. Spruytte, J. S. Harris, and K. H. Ploog, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1463214 80, 2120 (2002).
32. M. S. Skolnick, P. E. Simmonds, D. G. Hayes, A. W. Higgs, G. W. Smith, A. D. Pitt, C. R. Whitehouse, H. J. Hutchinson, C. R. H. White, L. Eaves, M. Henini, and O. H. Hughes, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.42.3069 42, 3069 (1990).
33. A. Patanè, J. Endicott, J. Ibanez, and L. Eaves, J. Phys.: Condens. Matter JCOMEL 0953-8984 16, S3171 (2004).
34. M. L. Leadbeater, E. S. Alves, F. W. Sheard, L. Eaves, M. Henini, O. H. Hughes, and G. A. Toombs, J. Phys.: Condens. Matter JCOMEL 0953-8984 10.1088/0953-8984/1/51/029 1, 10605 (1989).
35. E. P. O'Reilly, A. Lindsay, and S. Fahy, J. Phys.: Condens. Matter JCOMEL 0953-8984 16, S3257 (2004).
36. S. B. Healy, A. Lindsay, and E. P. O'Reilly, IEE Proc.-J: Optoelectron. IPJOEE 0267-3932 151, 397 (2004).
37. G. Bentoumi, V. Timoshevskii, N. Madini, M. Cote, R. Leonelli, J. N. Beaudry, P. Desjardins, and R. A. Masut, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.70.035315 70, 035315 (2004).
38. K. M. Yu, W. Walukiewicz, J. Wu, W. Shan, J. W. Beeman, M. A. Scarpulla, O. D. Dubon, and P. Becla, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.246403 91, 246403 (2003).