메뉴 건너뛰기




Volumn 70, Issue 3, 2004, Pages

Evidence for large configuration-induced band-gap fluctuations in GaAs 1-xNx alloys

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; GALLIUM ARSENIDE; NITROGEN;

EID: 42749102956     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.035315     Document Type: Article
Times cited : (21)

References (35)
  • 1
    • 0035884111 scopus 로고    scopus 로고
    • and references contained therein
    • P. R. C. Kent and A. Zunger, Phys. Rev. B 64, 115208 (2001), and references contained therein.
    • (2001) Phys. Rev. B , vol.64 , pp. 115208
    • Kent, P.R.C.1    Zunger, A.2
  • 2
    • 0141990606 scopus 로고    scopus 로고
    • and references contained therein
    • I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003), and references contained therein.
    • (2003) J. Appl. Phys. , vol.94 , pp. 3675
    • Vurgaftman, I.1    Meyer, J.R.2
  • 29
    • 33646648757 scopus 로고    scopus 로고
    • note
    • Band nonparabolocity increases the density of state, and thus the absorption coefficient, as the energy increases. Since this enhances the slope of the continuum edge, the values of R* obtained from Eq. (2) underestimate the actual exciton binding energy, as found in Ref. 24.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.