Influence of cluster states on band dispersion in bulk and quantum well (ultra-)dilute nitride semiconductors

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 397-401

  Healy, S B ^a   Lindsay, A ^a   O'Reilly, E P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GALLIUM ALLOYS; HAMILTONIANS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY;

BAND DISPERSION; CLUSTER STATE; DILUTE NITRIDE; MAGNETO-TUNNELLING SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 10844226606     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040875     Document Type: Article

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