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Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

Current-voltage characteristics of p-InGaNn-GaN vertical conducting diodes on n+ -SiC substrates

(4) Nishikawa, Atsushi a Kumakura, Kazuhide a Akasaka, Tetsuya a Makimoto, Toshiki a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRON TUNNELING; METALLORGANIC VAPOR PHASE EPITAXY; SILICON CARBIDE; SUBSTRATES;

FORWARD VOLTAGE DROPS; TUNNELING CURRENT; VERTICAL CONDUCTING DIODES;

SEMICONDUCTOR DIODES;

EID: 28444488884 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2140483 Document Type: Article

Times cited : (11)

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