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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 192-195

Structural modifications in amorphous Ge produced by ion implantation

(5) Desnica Frankovi, I D a Furi, K a Desnica, U V a Ridgway, M C b Glover, C J b

a RUDER BO KOVI INSTITUTE (Croatia)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

Amorphous Ge; Disorder; EXAFS; Ion implantation; Raman spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS MATERIALS; ION IMPLANTATION; RAMAN SPECTROSCOPY; THERMAL EFFECTS;

AMORPHIZATION THRESHOLD; AMORPHOUS GERMANIUM; EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY (EXAFS); MONOCRYSTALLINE MATERIALS;

SEMICONDUCTING GERMANIUM;

EID: 0035333168 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00489-4 Document Type: Conference Paper

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.